Registrations open!
Dead line:
Submission: 06/15
Acceptance: 07/18

Symposium C: Electronic Materials

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Scope of the Symposium

This Symposium will cover the fabrication and characterization of materials, interfaces, and devices ranging from advanced silicon technology to novel, unconventional systems. Contributions are welcome in both experimental and theory/simulation areas. Different classes of semiconductors (silicon, organic, wide band gap, high transfer channels etc.) and devices (high performance CMOS, discrete high power devices, flexible electronics etc.) will be addressed.

Abstracts will be solicited in (but not limited to) the following areas:

  • Advanced materials in silicon technology
  • Semiconductor surface passivation
  • Organic semiconductors and devices
  • Materials and devices for flexible electronics
  • Wide band gap semiconductors and devices
  • High transport channel materials
  • Novel device structures
  • Photo and electroluminescence
  • Advanced materials for photovoltaics
  • Nanostructured materials and nanoscale electronic devices
  • Materials for "More than Moore" and "beyond CMOS" electronics

Tentative list of invited speakers

J. P. de Souza (IBM, USA), G. M. Ribeiro (HP, USA), M. Quevedo-Lopez (University of Texas at Dallas, USA), D. M. Buca (Jülich Research Center, Germany), P. Kirsch (SEMATECH, USA).


Cristiano Krug (Instituto de Física – UFRGS)
Cylon Gonçalves da Silva (CEITEC S.A.)
Antônio L. P. Rotondaro (Centro de Tecnologia da Informação Renato Archer)
Celso Pinto de Melo (Departamento de Física – UFPE)

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