Symposium C: Electronic Materials

Scope of the Symposium

This Symposium will cover the fabrication and characterization of materials, interfaces, and devices ranging from advanced silicon technology to novel, unconventional systems. Contributions are welcome in both experimental and theory/simulation areas. Different classes of semiconductors (silicon, organic, wide band gap, high transfer channels etc.) and devices (high performance CMOS, discrete high power devices, flexible electronics etc.) will be addressed.

Abstracts will be solicited in (but not limited to) the following areas:

Advanced materials in silicon technology
Semiconductor surface passivation
Organic semiconductors and devices
Materials and devices for flexible electronics
Wide band gap semiconductors and devices
High transport channel materials
Novel device structures
Photo and electroluminescence
Advanced materials for photovoltaics
Nanostructured materials and nanoscale electronic devices
Materials for "More than Moore" and "beyond CMOS" electronics

Tentative list of invited speakers

J. P. de Souza (IBM, USA), G. M. Ribeiro (HP, USA), M. Quevedo-Lopez (University of Texas at Dallas, USA), D. M. Buca (Jülich Research Center, Germany), P. Kirsch (SEMATECH, USA).

Organizers

Cristiano Krug (Instituto de Física – UFRGS)
Cylon Gonçalves da Silva (CEITEC S.A.)
Antônio L. P. Rotondaro (Centro de Tecnologia da Informação Renato Archer)
Celso Pinto de Melo (Departamento de Física – UFPE)